View AT28C16-T_560338.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

Features
* Ideal Rewritable Attribute Memory * Simple Write Operation
- Self-Timed Byte Writes - On-chip Address and Data Latch for SRAM-like Write Operation - Fast Write Cycle Time - 1 ms - 5-Volt-Only Nonvolatile Writes End of Write Detection - RDY/BUSY Output - DATA Polling High Reliability - Endurance: 100,000 Write Cycles - Data Retention: 10 Years Minimum Single 5-Volt Supply for Read and Write Very Low Power - 30 mA Active Current - 100 A Standby Current
* * * *
Description
The AT28C16-T is the ideal nonvolatile attribute memory: it is a low power, 5-volt-only byte writable nonvolatile memory (EEPROM). Standby current is typically less than 100 A. The AT28C16-T is written like a Static RAM, eliminating complex programming algorithms. The fast write cycle times of 1 ms, allow quick card reconfiguration in-system. Data retention is specified as 10 years minimum, precluding the necessity for batteries. Three access times have been specified to allow for varying layers of buffering between the memory and the PCMCIA interface. The AT28C16-T is accessed like a Static RAM for read and write operations. During a byte write, the address and data are latched internally. Following the initiation of a write cycle, the device will go to a busy state and automatically write the latched data using an internal control timer. The device provides two methods for detecting the end of a write cycle; the RDY/BUSY output and DATA POLLING of I/O7.
16K (2K x 8) PCMCIA Nonvolatile Attribute Memory AT28C16-T
Pin Configurations
Pin Name A0 - A10 CE OE WE I/O0 - I/O7 RDY/BUSY NC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect
OE NC A9 A8 NC WE VCC RDY/BUSY NC A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
TSOP Top View
Rev. 0258C-10/98
1
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55C to +125C Storage Temperature ..................................... -65C to +125C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
2
AT28C16-T
AT28C16-T
Device Operation
READ: The AT28C16-T is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual-line control gives designers increased flexibility in preventing bus contention. BYTE WRITE: Writing data into the AT28C16-T is similar to writing into a Static RAM. A low pulse on WE or CE input with OE high and CE or WE low (respectively) initiates a byte write. The address is latched on the falling edge of WE or CE (whichever occurs last) and the data is latched on the rising edge of WE or CE (whichever occurs first). Once a byte write is started it will automatically time itself to completion. For the AT28C16-T the write cycle time is 1 ms maximum. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. READY/BUSY: Pin 1 is an open drain READY/BUSY output that indicates the current status of the self-timed internal write cycle. READY/BUSY is actively pulled low during the write cycle and is released at the completion of the write. The open drain output allows OR-tying of several devices to a common interrupt input. DATA POLLING: The AT28C16-T also provides DATA polling to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O 7 (the other outputs are indeterminate). When the write cycle is finished, true data appears on all outputs. WRITE PROTECTION: Inadvertent writes to the device are protected against in the following ways: (a) VCC sense--if VCC is below 3.8V (typical) the write function is inhibited; (b) V CC power on delay--once V CC has reached 3.8V the device will automatically time out 5 ms (typical) before allowing a byte write; and (c) write inhibit--holding any one of OE low, CE high or WE high inhibits byte write cycles. CHIP CLEAR: The contents of the entire memory of the AT28C16-T may be set to the high state by the Chip Clear operation. By setting CE low and OE to 12V, the chip is cleared when a 10 ms low pulse is applied to WE. DEVICE IDENTIFICATION: An extra 32 bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12V ( 0.5V) and using address locations 7E0H to 7FFH the additional bytes may be written to or read from in the same manner as the regular memory array.
3
DC and AC Operating Range
AT28C16-15T Operating Temperature (Case) VCC Power Supply Com. Ind. 0C - 70C -40C - 85C 5V 10%
Operating Modes
Mode Read Write
(2)
CE VIL VIL VIH X X X VIL
OE VIL VIH X
(1)
WE VIH VIL X VIH X X VIL
I/O DOUT DIN High Z
Standby/Write Inhibit Write Inhibit Write Inhibit Output Disable Chip Erase Notes: 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms. 3. VH = 12.0V 0.5V.
X VIL VIH VH
(3)
High Z High Z
DC Characteristics
Symbol ILI ILO ISB1 ISB2 Parameter Input Load Current Output Leakage Current VCC Standby Current CMOS VCC Standby Current TTL Condition VIN = 0V to VCC + 1V VI/O = 0V to VCC CE = VCC - 0.3V to VCC + 1.0V Com. CE = 2.0V to VCC + 1.0V Ind. Com. ICC VIL VIH VOL VOH VCC Active Current Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 2.1 mA IOH = -400 A 2.4 2.0 0.4 f = 5 MHz; IOUT = 0 mA Ind. Min Max 10 10 100 2 3 30 45 0.8 Units A A A mA mA mA mA V V V V
4
AT28C16-T
AT28C16-T
AC Read Characteristics
PCMCIA Symbol tC (R) tA (A) tA (CE) tA (OE) tEN (CE) tEN (OE) tV (A) tDIS (CE) tDIS (OE) Atmel Symbol tRC tACC tCE
(1)
AT28C16-15T Parameter Read Cycle Time Address Access Time CE Access Time OE Access Time Output Enable Time From CE Output Enable Time From OE Output Hold Time Output Disable Time From CE Output Disable Time From OE 0 0 0 0 0 0 50 50 Min 150 150 150 75 Max Units ns ns ns ns ns ns ns ns ns
tOE(2) tLz(4) tOLZ tOH tDF(3)(4) tDF(3)(4)
(4)
AC Read Waveforms(1)(2)(3)(4)
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement Level
Output Test Load
tR, tF < 5 ns
Pin Capacitance
f = 1 MHz, T = 25C(1)
Symbol CIN COUT Note: Typ 4 8 Max 6 12 Units pF pF Conditions VIN = 0V VOUT = 0V
1. This parameter is characterized and is not 100% tested.
5
AC Write Characteristics
PCMCIA Symbol tSU (A) tSU (OE-WE) tSU (CE-WE) tW (WE) tSU (D-WEH) tH (A) tH (D) tH (OE-WE) tH (CE-WE) tD (B) tC (W) Atmel Symbol tAS tOES tCS tWP tDS tAH tDH tOEH tCH tDB tWC Parameter Address Setup Time Output Disable Time To WE Chip Enable Time To WE Write Enable Pulse Width Data Setup To WE High Address Hold Time From WE Data Hold Time From WE High Output Enable Hold Time From WE High Chip Enable Hold Time From WE High Delay From WE High To BUSY Asserted Write Cycle Time Min 10 10 0 100 50 50 10 10 0 50 1 1000 Max Units ns ns ns ns ns ns ns ns ns ns ms
AC Write Waveforms
6
AT28C16-T
AT28C16-T
Data Polling Waveforms
Note:
1.
Data Polling AC Timing Characteristics are the same as the AC Read Characteristics.
Chip Erase Waveforms
tS = tH = 1 sec (min.) tW = 10 msec (min.) VH = 12.0 0.5V
7
Ordering Information
tACC (ns) 150 ICC (mA) Active 30 45 Notes: Standby 0.1 0.1 Ordering Code AT28C16-15TC AT28C16-15TI Package 28T 28T Operation Range Commercial (0C to 70C) Industrial (-40C to 85C)
1. See Valid Part Numbers table below. 2. The 28C16 200 ns and 250 ns speed selections have been removed from valid selections table and are replaced by the faster 150 ns TAA offering.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers AT28C16 Speed 15 Package and Temperature Combinations TC, TI
Die Products
Reference Section: Parallel EEPROM Die Products
Package Type 28T 28-Lead, Plastic Thin Small Outline Package (TSOP)
8
AT28C16-T
AT28C16-T
Packaging Information
28T, 28-Lead, Plastic Thin Small Outline Package (TSOP) Dimensions in Millimeters and (Inches)*
INDEX MARK AREA 11.9 (0.469) 11.7 (0.461) 13.7 (0.539) 13.1 (0.516)
0.55 (0.022) BSC 7.15 (0.281) REF 8.10 (0.319) 7.90 (0.311)
0.27 (0.011) 0.18 (0.007)
1.25 (0.049) 1.05 (0.041)
0.20 (0.008) 0.10 (0.004) 0 5 REF 0.20 (0.008) 0.15 (0.006)
0.70 (0.028) 0.30 (0.012)
*Controlling dimension: millimeters
9
10
AT28C16-T
AT28C16-T
11
Atmel Headquarters
Corporate Headquarters
2325 Orchard Parkway San Jose, CA 95131 TEL (408) 441-0311 FAX (408) 487-2600
Atmel Operations
Atmel Colorado Springs
1150 E. Cheyenne Mtn. Blvd. Colorado Springs, CO 80906 TEL (719) 576-3300 FAX (719) 540-1759
Europe
Atmel U.K., Ltd. Coliseum Business Centre Riverside Way Camberley, Surrey GU15 3YL England TEL (44) 1276-686677 FAX (44) 1276-686697
Atmel Rousset
Zone Industrielle 13106 Rousset Cedex, France TEL (33) 4 42 53 60 00 FAX (33) 4 42 53 60 01
Asia
Atmel Asia, Ltd. Room 1219 Chinachem Golden Plaza 77 Mody Road Tsimshatsui East Kowloon, Hong Kong TEL (852) 27219778 FAX (852) 27221369
Japan
Atmel Japan K.K. Tonetsu Shinkawa Bldg., 9F 1-24-8 Shinkawa Chuo-ku, Tokyo 104-0033 Japan TEL (81) 3-3523-3551 FAX (81) 3-3523-7581
Fax-on-Demand
North America: 1-(800) 292-8635 International: 1-(408) 441-0732
e-mail
literature@atmel.com
Web Site
http://www.atmel.com
BBS
1-(408) 436-4309
(c) Atmel Corporation 1998. Atmel Cor poration makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's website. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual proper ty of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life suppor t devices or systems. Marks bearing
(R)
and/or
TM
are registered trademarks and trademarks of Atmel Corporation. Printed on recycled paper.
0258C-10/98/xM
Terms and product names in this document may be trademarks of others.

▲Up To Search▲

Price & Availability of AT28C16-T

	To Download AT28C16-T Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .